"Design Guidelines of Thermally Stable Hafnia Ferroelectrics for the Fabrication of 3D Memory Devices"

Giuk Kim, Hunbeom Shin, Taehyong Eom, Minhyun Jung, Taeho Kim, Sangho Lee, Minki Kim, Yeongseok Jeong, Ji-Sung Kim, Kab-Jin Nam, Bong Jin Kuh and Sanghun Jeon, International Electron Devices Meeting (IEDM) 2022,

"The Opportunity of Negative Capacitance Behavior in Flash Memory for High-Density and Energy-Efficient In-Memory Computing Applications"

Taeho Kim†, Giuk Kim†, Dong Han Ko, Junghyeon Hwang, Sangho Lee, Hunbeom Shin, Yeongseok Jeong, Seong-Ook Jung, and Sanghun Jeon, Advanced Functional Materials,

"Steep Slope Transistor with Imprinted Antiferroelectric Film"

Sangho Lee‡, Yongsun Lee‡, Taeho Kim, Giuk Kim, Taehyong Eom, Hunbeom Shin, Yeongseok Jeong, and Sanghun Jeon*, ACS Applied Materials & Interfaces, accepted,

"Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High-Pressure Annealing"

Venkateswarlu Gaddam, Giuk Kim, Taeho Kim, Minhyun Jung, Chaeheon Kim, and Sanghun Jeon, ACS Applied Materials & Interfaces, Accepted,

"Flexible ferroelectric hafnia-based synaptic transistor by focused-microwave annealing"

Hongrae Joh, Minhyun Jung, Junghyeon Hwang, Youngin Goh, Taeseung Jung, Sanghun Jeon, ACS Applied Materials & Interfaces, 14, 1326-1333

"Selector-less Ferroelectric Tunnel Junctions by Stress Engineering and an Imprinting Effect for High-Density Cross-Point Synapse Arrays"

Youngin Goh, Junghyeon Hwang, Minki Kim, Yongsun Lee, Minhyun Jung, Sanghun Jeon, ACS Applied Materials & Interfaces, 13, 59422-59430

"High Performance and Self-rectifying Hafnia-based Ferroelectric Tunnel Junction for Neuromorphic Computing and TCAM Applications,"

Youngin Goh, Junghyeon Hwang , Minki Kim, Minhyun Jung , Sehee Lim , Seong-Ook Jung and Sanghun Jeon, IEEE International Electron Devices Meeting (IEDM), 2021, pp. 17.2.1-17.2.4

"Excellent Reliability and High-Speed Antiferroelectric HfZrO2 Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias Engineering"

Youngin Goh, Junghyeon Hwang, Sanghun Jeon, ACS Applied Materials & Interfaces, 12, 57539-57546

"Excellent Resistive Switching Performance of Cu–Se-Based Atomic Switch Using Lanthanide Metal Nanolayer at the Cu–Se/Al2O3 Interface"

Hyunsuk Woo, Sujaya Kumar Vishwanath, Sanghun Jeon, ACS applied materials & interfaces, 10, 8124-8131

"Efficient Suppression of Defects and Charge Trapping in High Density In–Sn–Zn–O Thin Film Transistor Prepared using Microwave-Assisted Sputter"

Youngin Goh, Jaehan Ahn, Jeong Rak Lee, Wan Woo Park, Sang-Hee Ko Park, Sanghun Jeon, ACS applied materials & interfaces, 9, 36962-36970

"Paper-Based Bimodal Sensor for Electronic Skin Applications"

Minhyun Jung, Kyungkwan Kim, Bumjin Kim, Haena Cheong, Kwanwoo Shin, Oh-Sun Kwon, Jong-Jin Park, Sanghun Jeon, ACS Applied Materials & Interfaces, 9, 26974-26982

"Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage"

Dong-Ho Kang, Woo-Young Choi, Hyunsuk Woo, Sungkyu Jang, Hyung-Youl Park, Jaewoo Shim, Jae-Woong Choi, Sungho Kim, Sanghun Jeon, Sungjoo Lee, Jin-Hong Park, ACS applied materials & interfaces, 9, 27073-27082

"Defects and Charge-Trapping Mechanisms of Double-Active-Layer In–Zn–O and Al–Sn–Zn–In–O Thin-Film Transistors"

Youngin Goh, Taeho Kim, Jong-Heon Yang, Ji Hun Choi, Chi-Sun Hwang, Sung Haeng Cho, Sanghun Jeon, ACS Applied Materials & Interfaces, 9, 9271-9279

"Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory"

Yiming Yang, Xingyue Peng, Hong-Seok Kim, Taeho Kim, Sanghun Jeon, Hang Kyu Kang, Wonjun Choi, Jindong Song, Yong-Joo Doh, and Dong Yu, Nano Letters, 15, pp. 5875–5882

"Transparent Semiconducting Oxide Technology for Touch Free Interactive Flexible Displays"

Sungsik Lee, Sanghun Jeon, Reza Chaji, and Arokia Nathan, Proceedings of the IEEE, Vol. 103, pp. 644-664