The Opportunity of Negative Capacitance Behavior in Flash Memory for High-Density and Energy-Efficient In-Memory Computing Applications
- Advanced Functional Materials
We develop an HfO2-based reversible single-domain ferroelectric (RSFE) film by coupling the flexoelectric and surface effects to stabilize the NC effect. Moreover, we demonstrate the negative capacitance-flash (NC-flash) device by integrating a blocking layer composed of RSFE/dielectric heterostructure where the NC effect is stabilized. Furthermore, we apply an AND flash-like array and source-follower/charge-sharing VMM-operation to the NC-flash for in-memory computing.